Influence of the p-type doping on the radiometric performances of MWIR InAs/GaSb superlattice photodiodes - ONERA - Office national d'études et de recherches aérospatiales Access content directly
Conference Papers Year : 2014

Influence of the p-type doping on the radiometric performances of MWIR InAs/GaSb superlattice photodiodes

Abstract

In this paper, quantum efficiency (QE) measurements performed on type-II InAs/GaSb superlattice (T2SL) photodiodes operating in the mid-wavelength infrared domain, are reported. Several comparisons were made in order to determine the SL structure showing optimum radiometric performances : same InAs-rich SL structure with different active zone thicknesses (from 0.5 micron to 4 microns) and different active zone doping (n-type versus p-type), same 1 micron thick p-type active zone doping with different SL designs (InAs-rich versus GaSb-rich and symmetric SL structures). Best result was obtained for the p-type doped InAs-rich SL photodiode, with a 4 microns active zone thickness, showing a QE that reaches 61 percent at lambda = 2 microns and 0V bias voltage.
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Dates and versions

hal-01070571 , version 1 (01-10-2014)

Identifiers

  • HAL Id : hal-01070571 , version 1

Cite

E. Giard, I. Ribet-Mohamed, M. Delmas, J.B. Rodriguez, Philippe Christol. Influence of the p-type doping on the radiometric performances of MWIR InAs/GaSb superlattice photodiodes. QSIP, Jun 2014, SANTA FE, United States. ⟨hal-01070571⟩
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