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Article Dans Une Revue 2D Materials Année : 2020

Excellent electronic transport in heterostructures of graphene and monoisotopic boron-nitride grown at atmospheric pressure

Résumé

Hexagonal boron nitride (BN), one of the very few layered insulators, plays a crucial role in 2D materials research. In particular, BN grown with a high pressure technique has proven to be an excellent substrate material for graphene and related 2D materials, but at the same time very hard to replace. Here we report on a method of growth at atmospheric pressure as a true alternative for producing BN for high quality graphene/BN heterostructures. The process is not only more scalable, but also allows to grow isotopically purified BN crystals. We employ Raman spectroscopy, cathodoluminescence, and electronic transport measurements to show the high-quality of such monoisotopic BN and its potential for graphene-based heterostructures. The excellent electronic performance of our heterostructures is demonstrated by well developed fractional quantum Hall states, ballistic transport over distances around 10 µm at low temperatures and electron-phonon scattering limited transport at room temperature.
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Dates et versions

hal-02927409 , version 1 (07-06-2023)

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Jens Sonntag, Jiahan Li, Alexandre Plaud, Annick Loiseau, Julien Barjon, et al.. Excellent electronic transport in heterostructures of graphene and monoisotopic boron-nitride grown at atmospheric pressure. 2D Materials, 2020, 7 (3), pp.031009. ⟨10.1088/2053-1583/ab89e5⟩. ⟨hal-02927409⟩
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